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Hector Becerril-Garcia

Hector Becerril-Garcia

Faculty
232 ROM
Phone number: 208-496-7706

Education

  • B.S. Industrial Chemistry, National Autonomous University of México (1996-2001)
  • Ph.D. Chemistry-Materials Chemistry, Brigham Young University (2002-2007)
  • Postdoctoral Fellow, Chemical Engineering, Stanford University (2007-2009)
  • Industry Experience: Corporate Research and Development lab, Grupo KUO, México (2000-2001)
  • Teaching Experience: BYU-Idaho (2009- present)

Interests

  • Scientific Teaching and Learning
  • Physical Chemistry and Molecular Dynamics
  • Nanotechnology and Materials Chemistry
  • Organic Semiconductors
  • Mentored Undergraduate Research

Selected Publications and Presentations

1. Giri, G.; Verploegen, E;  Mannsfeld, S.C.B.; Atahan-Evrenk,S.; Kim, D.H.; Lee, S.Y; Becerril, H.A.; Aspuru-Guzik,A.; Toney, M.F.; Bao, Z. Tuning charge transport in solution-sheared organic semiconductors using lattice strain. Nature, 480, 504–508 (2011).2. Becerril, H.A.; Roberts, M.E.; Liu, Z.; Locklin, J.; Bao, Z. High-Performance Organic Thin-Film Transistors through Solution-Sheared Deposition of Small-Molecule Organic Semiconductors. Adv. Mater. 20, 2588-2594 (2008).3. Becerril, H.A.; Mao, J.; Liu, Z.; Stoltenberg, R.M.; Bao, Z.; Chen, Y. Evaluation of solution-processed reduced graphene oxide films as transparent conductors. ACS Nano, 2, 463-470 (2008).

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